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Abstract A negative‐capacitance high electron mobility transistor (NC‐HEMT) with low hysteresis in the subthreshold region is demonstrated in the wide bandgap AlGaN/GaN material system using sputtered BaTiO₃as a “weak” ferroelectric gate in conjunction with a conventional SiN_xdielectric. An enhancement in the capacitance for BaTiO₃/SiN_xgate stacks is observed in comparison to control structures with SiN_xgate dielectrics directly indicating the negative capacitance contribution of the ferroelectric BaTiO₃layer. A significant reduction in the minimum subthreshold slope for the NC‐HEMTs is obtained in contrast to standard metal‐insulator‐semiconductor HEMTs with SiN_xgate dielectrics—97.1 mV dec⁻¹versus 145.6 mV dec⁻¹—with almost no hysteresis in theI_D–V_Gtransfer curves. These results are promising for the integration of ferroelectric perovskite oxides with III‐Nitride devices toward NC‐field‐effect transistor switches with reduced power consumption.